 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJE371 DESCRIPTION *Collector-Emitter Sustaining Voltage-- : VCEO(SUS) = -40V *DC Current Gain-- : hFE = 40(Min) @ IC= -1A *Complement to Type MJE521 APPLICATIONS *Designed for use in general-purpose amplifier and switching circuits. *Recommended for use in 5~20 Watt audio amplifiers utilizing complementary symmetry circuitry. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range VALUE -40 -40 -4 -4 -8 -2 40 150 -65~150 UNIT V V V A A A W PC Ti Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.12 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) ICBO IEBO hFE PARAMETER Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= -100mA; IB= 0 VCB= -40V; IE= 0 VEB= -4V; IC= 0 IC= -1 A; VCE= -1V 40 MIN -40 MJE371 MAX UNIT V -100 -100 A A isc Websitewww.iscsemi.cn |
Price & Availability of MJE371
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |